Comparative study of photocells based on silicon doped with nickel by various methods
К. А. ИсмайловBerdakh Karakalpak State University, Nukus, UzbekistanН. Ф. ЗикриллаевTashkent State Technical University, Tashkent, UzbekistanS. KoveshnikovTashkent State Technical University, Tashkent, UzbekistanKosbergenov E. Zh.Berdakh Karakalpak State University, Nukus, Uzbekistan
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Abstract
In this work, the parameters of silicon-based photocells doped with impurity nickel atoms by diffusion methods and during growth were compared. It was found that photocells doped with impurity nickel atoms during silicon growth have an improvement in parameters comparable to that obtained by the diffusion doping method. Additional heat treatment at T=800 o C makes it possible to significantly improve their basic parameters. Keywords:silicon, photocell, nickel, thermal annealing, diffusion.
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