Article

Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

Н. Ф. ЗикриллаевTashkent State Technical University, Tashkent, UzbekistanS. KoveshnikovTashkent State Technical University, Tashkent, UzbekistanKh.S. Turekeev Kh. S.Tashkent State Technical University, Tashkent, UzbekistanN. NorqulovMirzo Ulug’bek National University of Uzbekistan, Tashkent, UzbekistanС. А. ТачилинTashkent State Technical University, Tashkent, Uzbekistan

Физика твердого телаjournal2022en

ABI

Abstract

Diffusion from a layer of gallium phosphide GaP deposited onto a silicon surface was studied. After diffusion, the silicon samples were examined by the Van der Pauw method, and a scanning electron microscope was used to determine the concentration distribution of phosphorus and gallium atoms impurity. Keywords: diffusion, gallium phosphide, silicon, solubility, concentration, binary complexes.

Topics

Semiconductor materials and interfaces Silicon and Solar Cell Technologies Silicon Nanostructures and Photoluminescence

Identifiers

DOI: 10.21883/pss.2022.11.54183.367

Citations and references

Cited by 04 references

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