Spectral range of current self-oscillation in manganese-doped silicon
M. K. BakhadirkhanovTashkent State Technical University, Tashkent, 700095, UzbekistanН. Ф. ЗикриллаевTashkent State Technical University, Tashkent, 700095, UzbekistanK. S. AyupovTashkent State Technical University, Tashkent, 700095, UzbekistanD. BobonovTashkent State Technical University, Tashkent, 700095, UzbekistanF. A. KadirovaTashkent State Technical University, Tashkent, 700095, UzbekistanN. Il’khomzhonovTashkent State Technical University, Tashkent, Uzbekistan
ABI
Abstract
The spectral range of self-oscillation is found experimentally, and the variation of the related parameters versus the spectrum and power of incident IR radiation in manganese-doped p-silicon with resistivity ρ = 103−105 ω cm at T = 300 K is studied.