Article

Infrared quenching of photoconduction in silicon with multicharge manganese clusters

M. K. BachadyrchanovTashkent State Technical University, ul. Universiteskaya 2, Tashkent, 100095, Republic of UzbekistanС. Б. ИсамовTashkent State Technical University, ul. Universiteskaya 2, Tashkent, 100095, Republic of UzbekistanН. Ф. ЗикриллаевTashkent State Technical University, ul. Universiteskaya 2, Tashkent, 100095, Republic of UzbekistanЭ. У. АрзикуловSamarkand State University, Boulevard Universitetski, Samarkand, 140104, Republic of Uzbekistan

Surface Engineering and Applied Electrochemistryjournal2013en

ABI

Abstract

There was found the autoquenching effect of photoconductivity (PC) in silicon with repeatedly charged nanoclusters of manganese atoms in the range of hν = 0.4–0.5 eV. The peculiarity of the observed phenomenon is quenching of PC at the absolute absence of background or another light source only at the presence IR radiation. The nature of PC quenching of this type is explained by electron tunneling from the cluster level and their recombination with holes.

Topics

Silicon Nanostructures and Photoluminescence Nanowire Synthesis and Applications Semiconductor materials and interfaces

Identifiers

DOI: 10.3103/s1068375513040029

Citations and references

Cited by 6 12 references

Metrics — AkademScholar · Coming soon