Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon
Abstract
One of the crucial phenomena is auto-oscillations of current in elementary and binary (AIIIBV, AIIBVI) semiconductor materials, which allow the creation of solid-state oscillators with a wide frequency range from 10-3 to 10-6 Hz. In this paper, we show the results of a study on the effect of the degree of compensation (K) and the concentration of electroactive impurity selenium atoms on the excitation conditions and parameters (amplitude, frequency) of the auto-oscillation current associated with temperature and electrical instability in silicon. In the research, silicon doped with selenium atoms Si<Se> of identical geometrical dimensions has been used. The compensation degree of the initial boron atoms with impurity selenium atoms in the samples is in the range of K = 2NB/NSe = 0.94-1.1. It was found that excitation conditions, the amplitude and frequency of auto-oscillation current significantly vary depending on the degree of compensation of selenium atoms with boron atoms in the initial silicon. Obtained experimental results showed that the auto-oscillation current in silicon doped with impurity selenium atoms is characterized by ease of control with stable parameters (amplitude and frequency), which makes it possible based on this unique physical phenomenon to develop and create oscillatory circuits in information technology.