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Works cited by this work

15 works

Work: Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

  1. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    ArticleSemiconductor materials and interfacesSemiconductors20218 citations
    ABI

  2. Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, С. Б. Исамов, Н. Ф. Зикриллаев +4

    ArticleSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20208 citations
    ABI

  3. Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon

    M. K. Bakhadirkhanov, Sh. I. Askarov, Н. Норкулов

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19947 citations
    ABI

  4. Current-voltage behavior of silicon containing nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    ArticleSilicon Nanostructures and PhotoluminescenceInorganic Materials20146 citations
    ABI

  5. IR photodetectors in the range of λ = 1.5–8 μm, based on silicon with multicharged nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    ArticleAdvanced Semiconductor Detectors and MaterialsRussian Microelectronics20126 citations
    ABI

  6. Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon

    К. А. Исмайлов, X. M. Iliev, M. O. Tursunov +1

    Article20215 citations
    ABI

  7. Correlation between the material parameters and conditions for the excitation of recombination waves in Si〈;S〉

    М. К. Бахадырханов, U. Kh. Kurbanova, Н. Ф. Зикриллаев

    ArticleSemiconductor materials and interfacesSemiconductors19994 citations
    ABI

  8. Thermally stimulated currents and instabilities of the photoresponse in PbTe(In) alloys at low temperatures

    Б.А. Акимов, V. A. Bogoyavlenskii, L. I. Ryabovа +2

    Article19994 citations
    ABI

  9. Doping of silicon with selenium by diffusion from the gas phase

    Yu. A. Astrov, V. B. Shuman, L. М. Portsel +1

    Article20143 citations
    ABI

  10. Formation of Se2 quasimolecules in selenium-doped silicon

    A. A. Taskin, E. G. Tishkovskiǐ

    Article19983 citations
    ABI

  11. Temperature-electrical domains moving in the cathode-anode direction in CdS monocrystals

    K. Germanova

    Article19732 citations
    ABI

  12. On several regularities of deep levels of d-impurities in silicon

    Marat S. Yunusov, A. Akhmadaliev, Б. Л. Оксенгендлер +1

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19952 citations
    ABI

  13. Untitled

    Other1 citations
    ABI

  14. Control of the excitation conditions and the parameters of self-sustained oscillations of current in compensated silicon doped with manganese

    М. К. Бахадырханов, Kh. Azimkhuzhaev, Н. Ф. Зикриллаев +2

    ArticleSilicon and Solar Cell TechnologiesSemiconductors20001 citations
    ABI

  15. Investigation of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions

    T. S. Kamilov, L. L. Aksenova, B. Z. Sharipov +1

    ArticleSemiconductor materials and interfacesSemiconductors20151 citations
    ABI