Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms
M. K. BakhadirkhanovTashkent State Technical University, 100095, Tashkent, Republic of UzbekistanС. Б. ИсамовTashkent State Technical University, 100095, Tashkent, Republic of UzbekistanН. Ф. ЗикриллаевTashkent State Technical University, 100095, Tashkent, Republic of UzbekistanХ. М. ИлиевTashkent State Technical University, 100095, Tashkent, Republic of UzbekistanГ. Х. МавлоновTashkent State Technical University, 100095, Tashkent, Republic of UzbekistanS. KoveshnikovTashkent State Technical University, 100095, Tashkent, Republic of UzbekistanSh. N. IbodullaevTashkent State Technical University, 100095, Tashkent, Republic of Uzbekistan
ABI
Abstract
The paper reports that silicon with nanoclusters of manganese atoms has unique electrical, photoelectric, magnetic, and photomagnetic properties that are absent in ordinary doped semiconductor materials. The samples revealed an anomalously high impurity photosensitivity in the region of λ = 1–3 μm, a large negative magnetoresistance at room temperature, and new thermomagnetic and photomagnetic effects, which were observed in the same sample. The optimal electrophysical parameters of the samples were found. A unique set of the observed physical effects allows the creation of fundamentally new multifunction sensors of physical quantities based on these materials.
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