Article

Investigation of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions

T. S. KamilovTashkent State Technical University, Tashkent, 100095, UzbekistanL. L. AksenovaShubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, 119333, RussiaB. Z. SharipovTashkent State Technical University, Tashkent, 100095, UzbekistanI. V. ErnstTashkent State Technical University, Tashkent, 100095, Uzbekistan

Semiconductorsjournal2015en

ABI

Abstract

The features of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions are investigated at low temperatures and upon “intrinsic” illumination with hv > 1.12 eV. It is shown that low-frequency self-oscillations related to intensification and quenching of the photoconductivity can be obtained at high applied voltages.

Topics

Semiconductor materials and interfaces Silicon Nanostructures and Photoluminescence Thin-Film Transistor Technologies

Identifiers

DOI: 10.1134/s1063782615100097

Citations and references

Cited by 1 6 references

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