Investigation of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions
T. S. KamilovTashkent State Technical University, Tashkent, 100095, UzbekistanL. L. AksenovaShubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, 119333, RussiaB. Z. SharipovTashkent State Technical University, Tashkent, 100095, UzbekistanI. V. ErnstTashkent State Technical University, Tashkent, 100095, Uzbekistan
ABI
Аннотация
The features of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions are investigated at low temperatures and upon “intrinsic” illumination with hv > 1.12 eV. It is shown that low-frequency self-oscillations related to intensification and quenching of the photoconductivity can be obtained at high applied voltages.
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