N. Narkulov

Работ: 3

National University of Uzbekistan, 100174, Tashkent, Uzbekistan

1. Silicon with Binary GexSi1 – x Compounds

   Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

   СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.002219

2. Influence of structure defects on the radiation enhanced gold diffusion in silicon

   A. I. Koifman, N. Narkulov, Marat S. Yunusov

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1975Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.655288

3. Effect of the Magnetic Field, Electric Field, and Light Intensity on the Parameters of Recombination Waves in Silicon

   Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, U. Kh. Kurbanova +2

   СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.008623