G. A. Kushiev

Работ: 6

Tashkent State Technical University, Tashkent, Uzbekistan

1. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

   Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2023Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.258448

2. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

   Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

   СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2023Цитирований: 5

   ABIABI:AkademIndex/openalex/2023.article.001403

3. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

   Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

   СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2024.article.002753

4. Silicon with Binary GexSi1 – x Compounds

   Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

   СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.002219

5. Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

   N. F. Zikrillayev, F. E. Urakova, A. Toshev +4

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.003073

6. The Influence of γ-Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Grown by the Czochralski Method

   Х. М. Илиев, К. А. Исмайлов, E. Zh. Kosbergenov +6

   СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.010909