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F. E. Urakova

Работ: 6

Tashkent State Technical University, 100095, Tashkent, Uzbekistan

  1. Self-Oscillatory Processes in Silicon, Problems and Prospects for Research, and Their Application in Electronics

    Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, K. S. Ayupov +2

    СтатьяSemiconductor Quantum Structures and DevicesSurface Engineering and Applied Electrochemistry2024Цитирований: 3
    ABI

  2. Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

    Н. Ф. Зикриллаев, K. S. Ayupov, Manzura M. Shoabdirahimova +4

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 2
    ABI

  3. Silicon with Binary GexSi1 – x Compounds

    Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

    СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2024Цитирований: 1
    ABI

  4. Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

    N. F. Zikrillayev, F. E. Urakova, A. Toshev +4

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 0
    ABI

  5. Ferromagnetic Properties of Silicon Doped Manganese Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, Levent Trabzon +4

    СтатьяZnO doping and propertiesSurface Engineering and Applied Electrochemistry2025Цитирований: 0
    ABI

  6. Photovoltaic Cells Based on Silicon with Binary Compounds GexSi1–x

    Н. Ф. Зикриллаев, Kh. F. Zikrillaev, F. E. Urakova +4

    СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2025Цитирований: 0
    ABI