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S. Koveshnikov

Работ: 27

Tashkent State Technical University, Tashkent, 100097, Uzbekistan

  1. Silicon photovoltaic cells with clusters of nickel atoms

    М. К. Бахадырханов, S. A. Valiev, Н. Ф. Зикриллаев +3

    СтатьяSilicon Nanostructures and PhotoluminescenceApplied Solar Energy2016Цитирований: 35
    ABI

  2. Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep p–n-Junction

    М. К. Бахадырханов, С. Б. Исамов, Z. T. Kenzhaev +1

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2019Цитирований: 12
    ABI

  3. Radiation Stability of Nickel Doped Solar Cells

    К. А. Исмайлов, Z. T. Kenzhaev, S. Koveshnikov +2

    СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2022Цитирований: 9
    ABI

  4. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

    Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

    СтатьяSemiconductor materials and interfacesSemiconductors2022Цитирований: 8
    ABI

  5. Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon

    М. К. Бахадырханов, Z. T. Kenzhaev, S. Koveshnikov +2

    СтатьяSilicon and Solar Cell TechnologiesInorganic Materials2022Цитирований: 8
    ABI

  6. Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, С. Б. Исамов, Н. Ф. Зикриллаев +4

    СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2020Цитирований: 8
    ABI

  7. Silicon with Clusters of Impurity Atoms as a Novel Material for Optoelectronics and Photovoltaic Energetics

    M. K. Bakhadyrhanov, U. X. Sodikov, D. Melibayev +4

    СтатьяSilicon and Solar Cell TechnologiesJournal of Materials Science and Chemical Engineering2018Цитирований: 5
    ABI

  8. Effect of nickel on the lifetime of charge carriers in silicon solar cells

    Bakhadyrkhanov M.K., Kenzhaev Z.T., S. Koveshnikov +2

    СтатьяSilicon and Solar Cell TechnologiesФизика и техника полупроводников2022Цитирований: 5
    ABI

  9. Enhancing the Efficiency of Silicon Solar Cells through Nickel Doping

    Z. T. Kenzhaev, Н. Ф. Зикриллаев, K. S. Ayupov +3

    СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2023Цитирований: 4
    ABI

  10. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2024Цитирований: 2
    ABI

  11. Codiffusion of Gallium and Phosphorus Atoms in Silicon

    Н. Ф. Зикриллаев, С. Б. Исамов, S. Koveshnikov +2

    СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2023Цитирований: 2
    ABI

  12. An Infrared Radiation Photoresistor Based on Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, Sh. N. Ibodullaev, Н. Ф. Зикриллаев +1

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2021Цитирований: 2
    ABI

  13. Ordering of europium magnetic domains in silicon at room temperature

    G. H. Mavlonov, С. Б. Исамов, S. Koveshnikov +4

    СтатьяMagnetic properties of thin filmsIndian Journal of Physics2024Цитирований: 1
    ABI

  14. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 1
    ABI

  15. Electrical Properties of Silicon Doped with Manganese via High-Temperature Diffusion

    M. K. Bakhadirkhanov, Х. М. Илиев, M. O. Tursunov +3

    СтатьяSilicon Nanostructures and PhotoluminescenceInorganic Materials2021Цитирований: 1
    ABI

  16. Comparative study of photocells based on silicon doped with nickel by various methods

    К. А. Исмайлов, Н. Ф. Зикриллаев, S. Koveshnikov +1

    СтатьяSilicon and Solar Cell TechnologiesФизика и техника полупроводников2022Цитирований: 1
    ABI

  17. Development enhanced efficiency inverter for solar power station

    Eh.T. Yusupov, S. Koveshnikov, С. А. Тачилин

    СтатьяPower Systems and Renewable Energy2010Цитирований: 0
    ABI

  18. Development effective solar kitchen for individual use

    S. Koveshnikov, U.Kh. Kurbanova, С. А. Тачилин +1

    СтатьяBuilding Energy and Comfort Optimization2010Цитирований: 0
    ABI

  19. Inverter with advanced overload capacity for the use in self-contained photo electrical or wind-power station

    Борзов, Х. М. Илиев, S. Koveshnikov +2

    СтатьяAdvanced DC-DC Converters2010Цитирований: 0
    ABI

  20. Thin antireflection coatings for solar cells

    A. N. Nazarov, S. Koveshnikov, Sh.Z. Kurbanbaev +2

    СтатьяSilicon and Solar Cell Technologies2017Цитирований: 0
    ABI

  21. Electric Field-Stimulated Photoconductivity in Silicon with Manganese Atom Nanoclusters in the Range of 3–8 μm

    M. K. Bakhadirkhanov, С. Б. Исамов, Sh. N. Ibodullaev +2

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2020Цитирований: 0
    ABI

  22. Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

    Н. Ф. Зикриллаев, S. Koveshnikov, Kh. S. Turekeev +2

    СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2022Цитирований: 0
    ABI

  23. Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

    Н. Ф. Зикриллаев, S. Koveshnikov, Kh.S. Turekeev Kh. S. +2

    СтатьяSemiconductor materials and interfacesФизика твердого тела2022Цитирований: 0
    ABI

  24. Influence of Nickel Impurity on the Operating Parameters of a Silicon Solar Cell

    Z. T. Kenzhaev, Н. Ф. Зикриллаев, В. Б. Оджаев +4

    СтатьяSilicon and Solar Cell TechnologiesRussian Microelectronics2024Цитирований: 0
    ABI

  25. Composition of silicon jointly doped with impurity atoms of gallium and phosphorus

    Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

    СтатьяSilicon and Solar Cell TechnologiesПоверхность Рентгеновские синхротронные и нейтронные исследования2024Цитирований: 0
    ABI