An Infrared Radiation Photoresistor Based on Silicon with Nanoclusters of Manganese Atoms
M. K. BakhadirkhanovTashkent State Technical University, 100095, Tashkent, UzbekistanSh. N. IbodullaevTashkent State Technical University, 100095, Tashkent, UzbekistanН. Ф. ЗикриллаевTashkent State Technical University, 100095, Tashkent, UzbekistanS. KoveshnikovTashkent State Technical University, 100095, Tashkent, Uzbekistan
ABI
Аннотация
The possibility of using silicon with the nanoclusters of manganese atoms for creating photoresistors in the spectral region λ = 1.2–3 μm is shown. It is found that such photodetectors possess a threshold sensitivity of about 10–11 W at a wavelength of 1.55 μm. The quantum efficiency at a wavelength of 2 μm exceeds 10% and is 0.1% at a wavelength of 2.5 μm, which makes it possible to use the impurity photosensitivity of silicon with the nanoclusters of manganese atoms for creating high-resolution array photodetectors operating in the spectral region of up to 2.5 μm.
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Показатели — AkademScholar · Скоро