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Lotin
Oʻzbek

G. A. Kushiev

6 ta ish

Tashkent State Technical University, Tashkent, Uzbekistan

  1. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    MaqolaSemiconductor materials and interfacesEast European Journal of Physics20238 iqtibos
    ABI

  2. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 iqtibos
    ABI

  3. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 iqtibos
    ABI

  4. Silicon with Binary GexSi1 – x Compounds

    Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20241 iqtibos
    ABI

  5. Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

    N. F. Zikrillayev, F. E. Urakova, A. Toshev +4

    MaqolaSemiconductor materials and interfacesEast European Journal of Physics20250 iqtibos
    ABI

  6. The Influence of γ-Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Grown by the Czochralski Method

    Х. М. Илиев, К. А. Исмайлов, E. Zh. Kosbergenov +6

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20250 iqtibos
    ABI