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N. F. Zikrillayev

9 ta ish

Tashkent State Technical University, Tashkent,Republic of Uzbekistan

  1. Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

    B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

    MaqolaMaterial Science and ThermodynamicsPhysical Sciences and Technology20237 iqtibos
    ABI

  2. New Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V

    N. F. Zikrillayev, С. Б. Исамов, B. O. Isakov +4

    MaqolaSilicon Nanostructures and PhotoluminescenceJournal of Nano- and Electronic Physics20232 iqtibos
    ABI

  3. Obtaining manganese silicide films on a silicon substrate by the diffusion method

    N. F. Zikrillayev, M. M. Shoabdurahimova, T. Kamilov +4

    MaqolaSemiconductor materials and interfacesPhysical Sciences and Technology20222 iqtibos
    ABI

  4. Adaptation and optimization of a photovoltaic system for a country house

    N. F. Zikrillayev, K. S. Ayupov, Z. Mamarajabova +3

    MaqolaPhotovoltaic System Optimization TechniquesE3S Web of Conferences20231 iqtibos
    ABI

  5. Magnetic Properties of Silicon with Paramagnetic Impurity Atoms

    N. F. Zikrillayev, Г. Х. Мавлонов, Levent Trabzon +4

    MaqolaSemiconductor materials and interfacesEast European Journal of Physics20231 iqtibos
    ABI

  6. ON HOW TO CALCULATE THE BAND GAP OF SULFUR AND ZINC-DOPED SILICON

    N. F. Zikrillayev, Kh. F. Zikrillayev, B. Isakov +3

    MaqolaMaterial Properties and ApplicationsAustrian Journal of Technical and Natural Sciences20220 iqtibos
    ABI

  7. Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

    N. F. Zikrillayev, F. E. Urakova, A. Toshev +4

    MaqolaSemiconductor materials and interfacesEast European Journal of Physics20250 iqtibos
    ABI

  8. Investigation of the Influence of Nickel on the Behavior of Thermal Donors in Silicon

    B. K. Ismaylov, N. F. Zikrillayev, Kanatbay A. Ismailov +2

    MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 iqtibos
    ABI

  9. Effect of Nickel Diffusion on Trap States and Interface Quality in Polycrystalline Silicon Structures

    Kanatbay A. Ismailov, B. K. Ismaylov, N. F. Zikrillayev +3

    MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 iqtibos
    ABI