O. B. Tursunov

Работ: 1

Tashkent State Technical University, 100095, Tashkent, Uzbekistan

1. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

   Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

   СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2023Цитирований: 5

   ABIABI:AkademIndex/openalex/2023.article.001403