В. Г. Никитин

Работ: 1

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. High-temperature diode formed by epitaxial GaP layers

   M. M. Sobolev, В. Г. Никитин

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000035