Igor L. Bolotin

Работ: 2

Department of Physics, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715, Korea

1. Effect of the band-tail states on the exciton peaks in GaN epilayers grown on sapphire substrates

   Tae Won Kang, Sh. U. Yuldashev, Igor L. Bolotin +5

   СтатьяGaN-based semiconductor devices and materialsJournal of Applied Physics2000Цитирований: 1

   ABIABI:AkademIndex/openalex/2000.article.000087

2. Hydrogenation and annealing effects on the trapping times of the minority carriers in In-doped CdTe epitaxial layers grown on p-CdTe (211) substrates

   Sh. U. Yuldashev, Igor L. Bolotin, Y. B. Hou +4

   СтатьяAdvanced Semiconductor Detectors and MaterialsJournal of Applied Physics1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000143