A. E. Nikolaev

Работ: 4

Ioffe Physicotechnical Institute RAS

1. HVPE GaN and AIGaN 'Substrates' for Homoepitaxy

   Yu. Melnik, A. E. Nikolaev, С. И. Степанов +5

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000048

2. Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions

   N.I. Kuznetsov, A. E. Nikolaev, Yu. Melnik +1

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum2000Цитирований: 0

   ABIABI:AkademIndex/openalex/2000.article.000240

3. GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates

   Michael E. Mastro, O. Kryliouk, Todd Dann +4

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum2002Цитирований: 0

   ABIABI:AkademIndex/openalex/2002.article.000216

4. Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

   A. А. Lebedev, Oleg Ledyaev, Anatoly M. Strel’chuk +6

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000281