Yu. Melnik

Работ: 3

Ioffe Physicotechnical Institute RAS

1. HVPE GaN and AIGaN 'Substrates' for Homoepitaxy

   Yu. Melnik, A. E. Nikolaev, С. И. Степанов +5

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000048

2. Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions

   N.I. Kuznetsov, A. E. Nikolaev, Yu. Melnik +1

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum2000Цитирований: 0

   ABIABI:AkademIndex/openalex/2000.article.000240

3. GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates

   Michael E. Mastro, O. Kryliouk, Todd Dann +4

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum2002Цитирований: 0

   ABIABI:AkademIndex/openalex/2002.article.000216