Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures
A. А. LebedevRussian Academy of SciencesOleg LedyaevIoffe Physicotechnical Institute RASAnatoly M. Strel’chukA.F. Ioffe Physicotechnical Institute RASAlexey N. KuznetsovRussian Academy of SciencesA. E. CherenkovIoffe Physicotechnical Institute RASA. E. NikolaevIoffe Physicotechnical Institute RASA. S. ZubrilovRussian Academy of SciencesN. V. SeredovaRussian Academy of SciencesAnna VolkovaIoffe Institute of RAS
ABI
Аннотация
The investigated AlGaN epitaxial layers were grown by hydride vapor phase epitaxy (HVPE) on a commercial P+ SiC substrate or on an N+ SiC Lely substrate with a p+ SiC layer previously grown by sublimation epitaxy. To investigate the electrical characteristics of the n-p heterojunction, mesa structures of 100, 200 and 1500 microns in diameter were fabricated by reactive ion etching. Investigation of electrical characteristics shows good quality of grown n- AlGaN/p-SiC heterojunctions. This shows applicability of this technological combination for producing n-AlGaN/p-SiC bipolar or FET transistors.
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