GaN-based semiconductor devices and materials

Работ: 71

Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence
A. S. Usikov, V. V. Tret’yakov, W. V. Lundin +3
СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 0
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Annealing Effect on Passivated Deep Levels in GaN Epilayers
Sh. U. Yuldashev, Tae Won Kang, Woon Hyung Jung +6
СтатьяGaN-based semiconductor devices and materialsJapanese Journal of Applied Physics2000Цитирований: 0
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Growth of SiC and GaN on Porous Buffer Layers
M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12
СтатьяGaN-based semiconductor devices and materialsMaterials science forum2000Цитирований: 0
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Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions
N.I. Kuznetsov, A. E. Nikolaev, Yu. Melnik +1
СтатьяGaN-based semiconductor devices and materialsMaterials science forum2000Цитирований: 0
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GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates
Michael E. Mastro, O. Kryliouk, Todd Dann +4
СтатьяGaN-based semiconductor devices and materialsMaterials science forum2002Цитирований: 0
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4H-SiC pn Diode Grown by LPE Method for High-Power Applications
N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +6
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
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Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
A. А. Lebedev, Anatoly M. Strel’chuk, Alexey N. Kuznetsov +1
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0
ABI
hotoconverters with microrelief p-n junction on a basis of p-AlxGa1-xAs – p-GaAs – n-GaAs – n+-GaAs heterojunction
A. V. Karimov, Physics-Sun"
СтатьяSemiconductor Quantum Structures and DevicesSemiconductor Physics Quantum Electronics & Optoelectronics2005Цитирований: 0
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Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures
A. А. Lebedev, Oleg Ledyaev, Anatoly M. Strel’chuk +6
СтатьяGaN-based semiconductor devices and materialsMaterials science forum2006Цитирований: 0
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Quenching Photoconductivity and Photoelectric Memory in 6H-SiC
M. Duisenbaev
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0
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Optical confinement in laser diodes based on nitrides of Group III elements. Part 1: Theory and optical properties of materials
T. E. Slobodyan, K. A. Bulashevich, S. Yu. Karpov
СтатьяGaN-based semiconductor devices and materialsSemiconductors2008Цитирований: 0
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In‐situ doping and implantation of GaN layers with Mn
Zdeněk Sofer, David Sedmidubský, Josef Stejskal +7
СтатьяGaN-based semiconductor devices and materialsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics2009Цитирований: 0
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The quantum solution of the accumulation layer problem of n-InN
A. A. Klochikhin, I. Yu. Strashkova
СтатьяGaN-based semiconductor devices and materialsSemiconductors2009Цитирований: 0
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Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity
Jiandong Wei, S. F. Li, A. É. Atamuratov +2
СтатьяForce Microscopy Techniques and ApplicationsApplied Physics Letters2010Цитирований: 0
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The influence of concentrated solar radiation on the properties of Ga0.7In0.3P/GaP photoconverters
M. A. Abdukadyrov, I. O. Dzhumaniyazov, Р. А. Муминов
Статьяsolar cell performance optimizationApplied Solar Energy2011Цитирований: 0
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Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors
Casey M. Schwarz, Anupama Yadav, M. Shatkhin +10
СтатьяGaN-based semiconductor devices and materialsApplied Physics Letters2013Цитирований: 0
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Long-channel field-effect transistor with short-channel transistor properties
A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev
СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2014Цитирований: 0
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Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films
M. Maryško, J. Hejtmánek, V. V. Laguta +9
СтатьяZnO doping and propertiesJournal of Applied Physics2015Цитирований: 0
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Influence of the radius of the quantum dot and the nonquilibrium degree on the conversion efficiency of light emitting diodes
Х. Б. Ашуров, M. M. Adilov, С. Е. Максимов +1
СтатьяSemiconductor Quantum Structures and DevicesNanosystems Physics Chemistry Mathematics2015Цитирований: 0
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Recombination Processes in 4H-SiC pn Structures
Anatoly M. Strel’chuk, Baptiste Bérenguier, E. B. Yakimov +1
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2016Цитирований: 0
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Properties of tandem-junction heterophotoconverters with GaAs p–n junctions under exposure by bilaterally concentrated sunlight
M. A. Abdukadyrov, A. S. Ganiev, Р. А. Муминов +1
Статьяsolar cell performance optimizationApplied Solar Energy2016Цитирований: 0
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ZnO Nanostructured Wires for Gas Sensing Applications
Amir Abidov, Sevara Abdukarimova, Umida Ziyamukhamedova +3
СтатьяGas Sensing Nanomaterials and SensorsECS Meeting Abstracts2016Цитирований: 0
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On the possibility of applying n/(3C-SiC)–p/CDIAMOND white glow heterostructures with improved parameters in illumination systems with power consumption from solar radiation
Timur Saliev, S. L. Lutpullaev, A. Kutlimuratov
СтатьяGaN-based semiconductor devices and materialsApplied Solar Energy2016Цитирований: 0
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Features of the Formation of Ohmic Contacts to n+-InN
Pavlo Sai, N. V. Safryuk-Romanenko, Dmytro B. But +6
СтатьяGaN-based semiconductor devices and materialsUkrainian Journal of Physics2019Цитирований: 0
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Размерное квантование в n-GaP
B.P. Расулов, Р.Я. Расулов, И.М. Эшболтаев +1
СтатьяGaN-based semiconductor devices and materialsФизика и техника полупроводников2020Цитирований: 0
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