The influence of concentrated solar radiation on the properties of Ga0.7In0.3P/GaP photoconverters
M. A. AbdukadyrovTashkent University of Information Technologies, pr. Amira Temura 108, Tashkent, 100084, UzbekistanI. O. DzhumaniyazovTashkent University of Information Technologies, pr. Amira Temura 108, Tashkent, 100084, UzbekistanР. А. МуминовPhysical-Technical Institute, NPO Physics of the Sun, Uzbek Academy of Sciences, ul. Mavlyanova 25, Tashkent, 700084, Uzbekistan
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Аннотация
The properties of Ga0.7In0.3P/GaP heterophotoconverters with a two-sided contact grid are studied in the range of solar radiation concentration K s = 1−100 times and with natural convective heat exchange. It is found that, in the considered photoconverters, the dependences of an idle running voltage, the duty cycle of the current-voltage characteristic, and the efficiency on concentration are additionally improved due to high heat conduction of GaP and the temperature stability of the broad-band heterophotoconverter with “transparent“ structural design.
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