K. A. Bulashevich

Работ: 1

Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia, 194021

1. Optical confinement in laser diodes based on nitrides of Group III elements. Part 1: Theory and optical properties of materials

   T. E. Slobodyan, K. A. Bulashevich, S. Yu. Karpov

   СтатьяGaN-based semiconductor devices and materialsSemiconductors2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000178