Properties of tandem-junction heterophotoconverters with GaAs p–n junctions under exposure by bilaterally concentrated sunlight

Properties of GaAs/AlxGa1–xAs heterophotoconverters fabricated on two sides of monocrystal plates from GaP and GaAs under lighting conditions by V-shaped concentrators are described. It it found that, owing to the increased transparency of the photoconverter structure with respect to thermal photons and comparatively low GaP thermal resistance, the temperature increment of the p–n junctions and relative losses of the electrical power are notably lower than for photoconverters of the same structure on the basis of GaAs.

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