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David Sedmidubský

Работ: 7

166 28 Prague 6, Czech Republic

  1. Neutron diffraction as a precise and reliable method for obtaining structural properties of bulk quantities of graphene

    Zdeněk Sofer, Petr Šimek, Ondřej Jankovský +3

    СтатьяGraphene research and applicationsNanoscale2014Цитирований: 1
    ABI

  2. In‐situ doping and implantation of GaN layers with Mn

    Zdeněk Sofer, David Sedmidubský, Josef Stejskal +7

    СтатьяGaN-based semiconductor devices and materialsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics2009Цитирований: 0
    ABI

  3. Separation of thorium ions from wolframite and scandium concentrates using graphene oxide

    Ondřej Jankovský, David Sedmidubský, Petr Šimek +5

    СтатьяExtraction and Separation ProcessesPhysical Chemistry Chemical Physics2015Цитирований: 0
    ABI

  4. Definitive proof of graphene hydrogenation by Clemmensen reduction: use of deuterium labeling

    Zdeněk Sofer, Ondřej Jankovský, Alena Libánská +6

    СтатьяGraphene research and applicationsNanoscale2015Цитирований: 0
    ABI

  5. Use of deuterium labelling—evidence of graphene hydrogenation by reduction of graphite oxide using aluminium in sodium hydroxide

    Ondřej Jankovský, Petr Šimek, Michal Nováček +6

    СтатьяGraphene research and applicationsRSC Advances2015Цитирований: 0
    ABI

  6. Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

    M. Maryško, J. Hejtmánek, V. V. Laguta +9

    СтатьяZnO doping and propertiesJournal of Applied Physics2015Цитирований: 0
    ABI

  7. Erbium ion implantation into diamond – measurement and modelling of the crystal structure

    Jakub Cajzl, Pavla Nekvindová, Anna Macková +8

    СтатьяDiamond and Carbon-based Materials ResearchPhysical Chemistry Chemical Physics2017Цитирований: 0
    ABI