J. Hejtmánek

Работ: 4

Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Prague 6, Czech Republic

1. In‐situ doping and implantation of GaN layers with Mn

   Zdeněk Sofer, David Sedmidubský, Josef Stejskal +7

   СтатьяGaN-based semiconductor devices and materialsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics2009Цитирований: 0

   ABIABI:AkademIndex/openalex/2009.article.000176

2. Structure and Electric Transport in LaCo0.67Cu0.33O3

   M. Dlouhá, J. Hejtmánek, Z. Jirák +3

   СтатьяMagnetic and transport properties of perovskites and related materialsJournal of Superconductivity and Novel Magnetism2010Цитирований: 0

   ABIABI:AkademIndex/openalex/2010.article.000191

3. Test System for Thermoelectric Modules and Materials

   J. Hejtmánek, K. Knı́žek, V. Švejda +2

   СтатьяAdvanced Thermoelectric Materials and DevicesJournal of Electronic Materials2014Цитирований: 0

   ABIABI:AkademIndex/openalex/2014.article.000104

4. Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

   M. Maryško, J. Hejtmánek, V. V. Laguta +9

   СтатьяZnO doping and propertiesJournal of Applied Physics2015Цитирований: 0

   ABIABI:AkademIndex/openalex/2015.article.000214