I. Yu. Strashkova

Работ: 1

Ioffe Physico-Technical Institute, St. Petersburg, 194021, Russia

1. The quantum solution of the accumulation layer problem of n-InN

   A. A. Klochikhin, I. Yu. Strashkova

   СтатьяGaN-based semiconductor devices and materialsSemiconductors2009Цитирований: 0

   ABIABI:AkademIndex/openalex/2009.article.000371