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GaN-based semiconductor devices and materials

Работ: 71

  1. Energy and Temperature Dependence of the Secondary Ion Emission of GaN/SiC Clusters under Cesium-Ion Bombardment

    Б.Г. Атабаев, R. Djabbarganov, M. Kh. Akhmadjanova +1

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 0
    ABI

  2. RETRACTED: Investigation of crotonaldehyde adsorption on pure and Pd-decorated GaN nanotubes: A density functional theory study

    Saade Abdalkareem Jasim, Maria Jade Catalan Opulencia, Ali Majdi +4

    СтатьяGas Sensing Nanomaterials and SensorsSolid State Communications2022Цитирований: 0
    ABI

  3. Self-Nucleated Nonpolar GaN Nanowires with Strong and Enhanced UV Luminescence

    Baodan Liu, Qingyun Liu, Wenjin Yang +4

    СтатьяGaN-based semiconductor devices and materialsCrystal Growth & Design2022Цитирований: 0
    ABI

  4. Extremely high frequency Schottky diodes based on single GaN nanowires

    K Yu Shugurov, А М Можаров, Vladimir V. Fedorov +3

    СтатьяGaN-based semiconductor devices and materialsNanotechnology2023Цитирований: 0
    ABI

  5. Retraction notice to “Investigation of crotonaldehyde adsorption on pure and Pd-decorated GaN nanotubes: A density functional theory study” [Solid State Commun. 348–349, (2022) 114741]

    Saade Abdalkareem Jasim, Maria Jade Catalan Opulencia, Ali Majdi +4

    СтатьяGaN-based semiconductor devices and materialsSolid State Communications2023Цитирований: 0
    ABI

  6. Formation and Properties of ITO Films Produced on Silicon for Applications in Solar Cells

    А. С. Саидов, А. Кутлимратов, R. R. Kabulov +3

    СтатьяZnO doping and properties2023Цитирований: 0
    ABI

  7. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

    D. V. Saparov, А. С. Саидов, Sh. N. Usmonov +3

    ПрепринтGaN-based semiconductor devices and materialsResearch Square2023Цитирований: 0
    ABI

  8. A new method for growing epitaxial films on foreign substrates − Bent epitaxy

    D. V. Saparov

    СтатьяZnO doping and propertiesJournal of Crystal Growth2024Цитирований: 0
    ABI

  9. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

    А. С. Саидов, Shukrullo Usmonov, D. V. Saparov +4

    СтатьяGaN-based semiconductor devices and materialsAIP conference proceedings2024Цитирований: 0
    ABI

  10. Tuning barrier height and enhancing electrical properties of MOS heterojunctions using Fe2O3 doped MoO3 nanocomposite interlayer on Ni/Cr/n-GaN for optoelectronic devices

    Karri Aswini, Chaitanya Kumar Kunapalli, K. Munirathnam +7

    СтатьяSemiconductor materials and interfacesPhysica B Condensed Matter2025Цитирований: 0
    ABI

  11. Controlling dislocation clusters in selective area growth of gallium nitride with hexagonal configurations of serpentine channel mask

    Muhammad Saddique Akbar Khan, Yu Guo, Pervaiz Ahmad +4

    СтатьяGaN-based semiconductor devices and materialsMicro and Nanostructures2025Цитирований: 0
    ABI

  12. Design of Class AB Power Amplifier to Enhance Detection Range of S-band Radar Module Using GaN HEMT

    Muhammad Farhan Shahid, Sohaib Yaqoob Chaudhry, Valisher Sapayev Odilbek +3

    СтатьяAdvanced Power Amplifier Design2025Цитирований: 0
    ABI

  13. Investigation of corrosion rate in inhibitor and no-inhibitor environment by polarization resistance and gravimetric method

    Erali Panoev, Gayrat Bozorov

    СтатьяGaN-based semiconductor devices and materialsAIP conference proceedings2025Цитирований: 0
    ABI

  14. Growing Perfect Single-Crystal Epitaxial Films of (Si<sub>2</sub>)<sub>1-x</sub>(GaN)<sub>x</sub> Solid Solutions on Si (111) Substrates from the Liquid Phase

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +5

    СтатьяGaN-based semiconductor devices and materialsActa Physica Polonica A2025Цитирований: 0
    ABI

  15. Advancements in Wide Bandgap Semiconductors for High-Power and High-Frequency Applications

    Amrutha Sampath, Sudhanshu Maurya, Snehlata Wankhade +3

    СтатьяGa2O3 and related materials2025Цитирований: 0
    ABI

  16. MODELING OF STRAIN-INDUCED EFFECTS ON GAN PN JUNCTIONS USING SILVACO ATLAS

    A.I.Mamadjanov, H.Olimxonova

    СтатьяGaN-based semiconductor devices and materialsZenodo (CERN European Organization for Nuclear Research)2025Цитирований: 0
    ABI

  17. MODELING OF STRAIN-INDUCED EFFECTS ON GAN PN JUNCTIONS USING SILVACO ATLAS

    A.I.Mamadjanov, H.Olimxonova

    СтатьяGaN-based semiconductor devices and materialsZenodo (CERN European Organization for Nuclear Research)2025Цитирований: 0
    ABI

  18. Modeling Advanced Electronic Device Characterization Using a Unified Physics-Informed Machine Learning Framework

    Elsayed Ebrahim E., Hayal Mohammed R, Juraev Davron Aslonqulovich +1

    СтатьяAdvancements in Semiconductor Devices and Circuit Design2025Цитирований: 0
    ABI

  19. The Study of Structure, Electrophysical, Physicomechanical and Optical Properties of Gaas with Oxygen Impurities and Doped Chromium

    M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2

    ПрепринтGaN-based semiconductor devices and materialsSSRN Electronic Journal2025Цитирований: 0
    ABI

  20. Chemical analysis of ion traces in the betta Ga2O3 structure and fundamentals of molecular dynamics of mobilization hydrogen and helium molecules

    A.S. Nygymanova, G. Yergaliuly, Bakytbek Mauyey +9

    СтатьяGa2O3 and related materialsResults in Materials2026Цитирований: 0
    ABI

  21. Numerical analysis of femtosecond second-harmonic generation in periodically poled GaN crystals

    О.И. Сабиров, А.С. Аширов, U. K. Sapaev

    СтатьяNonlinear Photonic SystemsJournal of Russian Laser Research2026Цитирований: 0
    ABI