Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

Abstract The technological capabilities of the method of liquid-phase epitaxy from a limited volume of Sn solution-melt for obtaining films of substitutional solid solution (Si 2 ) 1−x (GaN) x on Si (111) substrates are shown. The grown films had a single-crystal structure with (111) orientation, n -type conductivity with a resistivity of ρ ~ 1.38 Ω∙cm, a carrier concentration of n ~ 3.4∙10 16 cm − 3 , and a charge carrier mobility of µ ~ 133 cm 2 /(V⋅sec). The relatively narrow width (FWHM = 780 arcsec) and high intensity (2⋅10 5 pulses/sec) of the main structural reflection (111) Si/GaN indicate a high degree of perfection of the crystal lattice of the epitaxial layer (Si 2 ) 1−x (GaN) x . The photosensitivity region of p -Si– n -(Si 2 ) 1−x (GaN) x heterostructures covers the photon energy range from 1.2 to 2.4 eV, with a maximum at 1.9 eV.

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