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Работы, на которые ссылается эта работа

Работ: 14

Работа: Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

  1. X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals

    I. L. Shul’pina, R. N. Kyutt, В. В. Ратников +3

    Статья2010Цитирований: 9
    ABI

  2. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

    А. С. Саидов, Sh. N. Usmonov, D. V. Saparov

    СтатьяQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering2019Цитирований: 8
    ABI

  3. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +2

    СтатьяChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B2022Цитирований: 6
    ABI

  4. Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

    Kai Cheng, Maarten Leys, Stefan Degroote +7

    Статья2006Цитирований: 3
    ABI

  5. Growing the solid solution of molekular substitution (GaAs)<sub>1-z</sub>(ZnSe)<sub>z</sub>

    А. С. Саидов, D. V. Saparov, Shukrullo Usmonov +2

    СтатьяChalcogenide Semiconductor Thin FilmsIOP Conference Series Materials Science and Engineering2021Цитирований: 2
    ABI

  6. Journal of Thermal Analysis and Calorimetry

    Статья2008Цитирований: 2
    ABI

  7. Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing

    Hideo Aida, Hidetoshi Takeda, Natsuko Aota +1

    Статья2011Цитирований: 2
    ABI

  8. Growth of crack-free GaN on Si(111) with graded AlGaN buffer layers

    A. Able, W. Wegscheider, Karl Engl +1

    Статья2005Цитирований: 2
    ABI

  9. Kinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substrates

    Li Wang, Glenn M. Walker, Jessica Chai +3

    Статья2015Цитирований: 2
    ABI

  10. Analysis of the growth of GaN epitaxy on silicon

    Danmei Zhao, Degang Zhao

    Статья2018Цитирований: 2
    ABI

  11. Synthesis Gallium Nitride on Porous Silicon Nano-Structure for Optoelectronics Devices

    Haneen D. Jabbar, Makram A. Fakhri, Mohammed Jalal AbdulRazzaq

    Статья2022Цитирований: 2
    ABI

  12. Epitaxial Growth of GaN/AlN on <i>h</i>-BN/Si(111) by Metal–Organic Chemical Vapor Deposition: An Interface Analysis

    R. Loganathan, Muzafar Ahmad Rather, Kun‐Lin Lin +4

    Статья2023Цитирований: 2
    ABI

  13. Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer

    Marwan Mansor, Rizuan Norhaniza, Ahmad Shuhaimi Abu Bakar +4

    Статья2023Цитирований: 2
    ABI

  14. Preparation and Characterization of UV-Enhanced GaN/ Porous Si Photodetector using PLA in Liquid

    Makram A. Fakhri, Ali Abdulkhaleq Alwahib, Evan T. Salim +7

    Статья2023Цитирований: 2
    ABI