Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseОткрытый API экосистемы

D. V. Saparov

Работ: 23

Physical-Technical Institute, Scientific Association “Physics-Sun”, Uzbek Academy of Sciences, Chingiz Aytmatov Street 2B, Tashkent 100084, Uzbekistan

  1. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +5

    СтатьяSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics2021Цитирований: 9
    ABI

  2. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

    А. С. Саидов, Sh. N. Usmonov, D. V. Saparov

    СтатьяQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering2019Цитирований: 8
    ABI

  3. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

    СтатьяSemiconductor materials and interfacesSemiconductors2009Цитирований: 8
    ABI

  4. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +2

    СтатьяChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B2022Цитирований: 6
    ABI

  5. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2007Цитирований: 3
    ABI

  6. Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2007Цитирований: 3
    ABI

  7. Growing the solid solution of molekular substitution (GaAs)<sub>1-z</sub>(ZnSe)<sub>z</sub>

    А. С. Саидов, D. V. Saparov, Shukrullo Usmonov +2

    СтатьяChalcogenide Semiconductor Thin FilmsIOP Conference Series Materials Science and Engineering2021Цитирований: 2
    ABI

  8. Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers

    А. С. Саидов, A. Sh. Razzakov, D. V. Saparov

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2002Цитирований: 2
    ABI

  9. Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions

    А. С. Саидов, Sh. N. Usmonov, D. V. Saparov +1

    СтатьяSilicon Nanostructures and PhotoluminescenceApplied Solar Energy2020Цитирований: 2
    ABI

  10. Processes of Current Transport in p-Si-n-(Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(GaP)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Heterostructure Produced by Liquid Phase Epitaxy

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +4

    СтатьяSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology2022Цитирований: 1
    ABI

  11. Thermally Stimulated Transformation of Oxygen Atoms Between Phase States in a Silicon Single Crystal

    M. U. Kalanov, I. I. Sadikov, A. V. Khugaev +4

    СтатьяSilicon Nanostructures and PhotoluminescenceSilicon2024Цитирований: 1
    ABI

  12. Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2007Цитирований: 1
    ABI

  13. Photosensitivity of pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y , pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y ,-n(GaSb) structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2008Цитирований: 1
    ABI

  14. Expansion of the spectral sensitivity range of the silicon photocells by growing a solid (Si2)1–x (GaP) x (0 ≤ x ≤ 1) solution

    D. V. Saparov, М. С. Саидов, А. С. Саидов

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2016Цитирований: 1
    ABI

  15. Growth and spectral sensitivity of pSi-n(Si2)1−x (ZnSe) x structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2008Цитирований: 0
    ABI

  16. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

    D. V. Saparov, А. С. Саидов, Sh. N. Usmonov +3

    ПрепринтGaN-based semiconductor devices and materialsResearch Square2023Цитирований: 0
    ABI

  17. Thermally Stimulated Transformation of Oxygen Atoms between Phase States in a Silicon Single Crystal

    M. U. Kalanov, I. I. Sadikov, A. V. Khugaev +4

    ПрепринтSilicon Nanostructures and PhotoluminescenceResearch Square2023Цитирований: 0
    ABI

  18. Structural Features of the Epitaxial Layer of the (GaAs)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(Ge&lt;sub&gt;2&lt;/sub&gt;)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Solid Solution Grown from a Bismuth Solution Melt

    А. С. Саидов, M. U. Kalanov, D. V. Saparov +4

    СтатьяSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology2024Цитирований: 0
    ABI

  19. Regarding Spectrum Photosensitivity and Certain GaAs’s Structural Properties Heterostructures, Namely (GaAs)<sub>1-x-y</sub>(Ge2)<sub>x</sub>(ZnSe)<sub>y</sub>

    Shavkat Ismailov, D. V. Saparov, А. С. Саидов +2

    СтатьяPhase-change materials and chalcogenides2024Цитирований: 0
    ABI

  20. A new method for growing epitaxial films on foreign substrates − Bent epitaxy

    D. V. Saparov

    СтатьяZnO doping and propertiesJournal of Crystal Growth2024Цитирований: 0
    ABI

  21. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

    А. С. Саидов, Shukrullo Usmonov, D. V. Saparov +4

    СтатьяGaN-based semiconductor devices and materialsAIP conference proceedings2024Цитирований: 0
    ABI

  22. Radiation-Stimulated Transformation of Cxygen Atoms Between Impurity Phase States of A Growing Silicon Single Crystal

    M. U. Kalanov, I. I. Sadikov, Sh. R. Malikov +5

    СтатьяSilicon and Solar Cell TechnologiesSilicon2025Цитирований: 0
    ABI

  23. Growing Perfect Single-Crystal Epitaxial Films of (Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1-x&lt;/sub&gt;(GaN)&lt;sub&gt;x&lt;/sub&gt; Solid Solutions on Si (111) Substrates from the Liquid Phase

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +5

    СтатьяGaN-based semiconductor devices and materialsActa Physica Polonica A2025Цитирований: 0
    ABI