Expansion of the spectral sensitivity range of the silicon photocells by growing a solid (Si2)1–x (GaP) x (0 ≤ x ≤ 1) solution

The article concerns the growth of a hetero-epitaxial GaP layer on a silicon substrate via a buffer layer containing a continuous solid substitutional solution (Si2)1–x (GaP) x (0 ≤ x ≤ 1) from the liquid phase. Epitaxial films grown under 950–830°С have n-type conductivity and specific resistance of ~0.01 Ohm•cm. The thickness of epitaxial films is 10–15 μm. The spectral sensitivity of the pSi-n(Si2)1–x (GaP) x (0 ≤ x ≤ 1) heterostructure, which allows expanding the region of the spectral sensitivity of silicon photoreceivers and photocells, is studied.

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