Growth and spectral sensitivity of pSi-n(Si2)1−x (ZnSe) x structures
А. С. СаидовPhysico-Technical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanМ. С. СаидовPhysico-Technical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSh. N. UsmonovPhysico-Technical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanK. A. AmonovPhysico-Technical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanD. V. SaparovPhysico-Technical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
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Аннотация
Epitaxial layers of n-type (Si2)1−x (ZnSe) x solid solution (0 ≤ x ≤ 0.01) were grown on p-Si substrates by liquid-phase epitaxy from a limited volume of a Sn solution-melt. The photosensitivity spectra of the pSi-n(Si2)1−x (ZnSe) x structure were analyzed. A sensitivity peak at E ≈ 2.3 eV was revealed, which is likely conditioned by the ZnSe molecular level located 1.2. eV below the ceiling of the Si valence band.
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