Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase
A.S. SaidovPhysical-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanShukrullo UsmonovPhysical-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanD. V. SaparovPhysical-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanTolmas IshniyazovPhysical-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanKurban GaimnazarovGulistan State University, Sirdarya, UzbekistanS NiyazovGulistan State University, Sirdarya, UzbekistanKomil SATTARKULOVGulistan State University, Sirdarya, Uzbekistan
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