S Niyazov

Работ: 1

Gulistan State University, Sirdarya, Uzbekistan

1. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

   А. С. Саидов, Shukrullo Usmonov, D. V. Saparov +4

   СтатьяGaN-based semiconductor devices and materialsAIP conference proceedings2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.009139