Tolmas Ishniyazov

Работ: 3

Physical Technical Institute of Uzbekistan Academy of Sciences

1. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

   D. V. Saparov, А. С. Саидов, Sh. N. Usmonov +3

   ПрепринтGaN-based semiconductor devices and materialsResearch Square2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.preprint.000184

2. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

   А. С. Саидов, Shukrullo Usmonov, D. V. Saparov +4

   СтатьяGaN-based semiconductor devices and materialsAIP conference proceedings2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.009139

3. Growing Perfect Single-Crystal Epitaxial Films of (Si<sub>2</sub>)<sub>1-x</sub>(GaN)<sub>x</sub> Solid Solutions on Si (111) Substrates from the Liquid Phase

   А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +5

   СтатьяGaN-based semiconductor devices and materialsActa Physica Polonica A2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.007804