Photosensitivity of pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y , pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y ,-n(GaSb) structures
А. С. СаидовPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanМ. С. СаидовPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSh. N. UsmonovPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanD. V. SaparovPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanKhomidkhodzha KholikovAcademy of Sciences of the Republic Of Uzbekistan
ABI
Аннотация
Two-stage buffer n(GaSb)1 − x − y (Si2) x (GaAs) y and perfect n(GaSb) layers are grown on an pSi substrate by liquid-phase epitaxy from a tin solution-melt. It is shown that the photosensitivity of the pSi−n(GaSb)1 − x − y (Si2) x (GaAs) y structures is in the spectral range 1.0-1.6 eV, and that of the pSi − n (GaSb)1 − x − y (Si2) x (GaAs) y − n (GaSb) structures is in the range 0.62-1.15 eV.
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