Khomidkhodzha Kholikov

Работ: 8

Starodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 100084, Uzbekistan

I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x
А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1
СтатьяMaterial Science and ThermodynamicsSemiconductors2009Цитирований: 13
ABI
Thermovoltaic properties of technical silicon melted by solar radiation
А. С. Саидов, A. A. Abakumov, М. С. Саидов +2
СтатьяDiverse Industrial Engineering TechnologiesApplied Solar Energy2007Цитирований: 11
ABI
Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy
Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2
СтатьяSemiconductor materials and interfacesSemiconductors2009Цитирований: 8
ABI
Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions
А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1
СтатьяSemiconductor materials and interfacesTechnical Physics Letters2007Цитирований: 3
ABI
Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions
А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1
СтатьяSemiconductor materials and interfacesTechnical Physics Letters2007Цитирований: 3
ABI
Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures
А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2
СтатьяSemiconductor materials and interfacesApplied Solar Energy2007Цитирований: 1
ABI
Photosensitivity of pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y , pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y ,-n(GaSb) structures
А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2
СтатьяSemiconductor materials and interfacesApplied Solar Energy2008Цитирований: 1
ABI
Thermovoltaic properties of technical silicon melted by solar radiation
А. С. Саидов, A. A. Abakumov, М. С. Саидов +2
СтатьяMaterial Science and ThermodynamicsApplied Solar Energy2007Цитирований: 1
ABI