H.Olimxonova

Работ: 2

1University of Business and Science. 111, Zarbdor str, Namangan, Uzbekistan

1. MODELING OF STRAIN-INDUCED EFFECTS ON GAN PN JUNCTIONS USING SILVACO ATLAS

   A.I.Mamadjanov, H.Olimxonova

   СтатьяGaN-based semiconductor devices and materialsZenodo (CERN European Organization for Nuclear Research)2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.011916

2. MODELING OF STRAIN-INDUCED EFFECTS ON GAN PN JUNCTIONS USING SILVACO ATLAS

   A.I.Mamadjanov, H.Olimxonova

   СтатьяGaN-based semiconductor devices and materialsZenodo (CERN European Organization for Nuclear Research)2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.011932