Статья

Tuning barrier height and enhancing electrical properties of MOS heterojunctions using Fe2O3 doped MoO3 nanocomposite interlayer on Ni/Cr/n-GaN for optoelectronic devices

Karri AswiniDepartment of Physics, School of Applied Sciences REVA University, Bengaluru 560064, IndiaChaitanya Kumar KunapalliDepartment of Physics, Marri Laxman Reddy Institute of Technology and Management, Hyderabad – 500043K. MunirathnamDepartment of Physics, School of Applied Sciences REVA University, Bengaluru 560064, IndiaV. ManjunathDepartment of Physics, Sri Padmavati Mahila Visvavidyalayam, Tirupati, Andhra Pradesh 517502, IndiaCh. D. V. Subba RaoDepartment of Physics and Astronomy, Navoi State University, Navoi, Uzbekistan. 210100B. Purusottam ReddyDepartment of Electronic Engineering, Yeungnam University, 280 Daehak-ro, Gyeongsan-si, Gyongsanbuk-do, 38541, Republic of KoreaSi‐Hyun ParkDepartment of Electronic Engineering, Yeungnam University, 280 Daehak-ro, Gyeongsan-si, Gyongsanbuk-do, 38541, Republic of KoreaYoungsuk SuhDepartment of Electronic Engineering, Yeungnam University, 280 Daehak-ro, Gyeongsan-si, Gyongsanbuk-do, 38541, Republic of KoreaYedluri Anil KumarSaveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences, Saveetha University, Chennai 602105, Tamil Nadu, IndiaEzhakudiyan RavindranDepartment of Chemistry, SRM Institute of Science and Technology, Kattankulathur, Chennai, Tamil Nadu-60323. India

Physica B Condensed Matterjournal2025en

ABI

Аннотация

Аннотация отсутствует.

Темы

Semiconductor materials and interfaces Semiconductor materials and devices GaN-based semiconductor devices and materials

Идентификаторы

DOI: 10.1016/j.physb.2025.417422

Цитирования и источники

Цитирований: 0Использованных источников: 52

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