Abror Abdaminov

Работ: 4

Institute of Nuclear Physics, Academy of Sciences of Uzbekistan, Ulugbek District, 100214 Tashkent, Uzbekistan

1. The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium

   M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2

   СтатьяSemiconductor Quantum Structures and DevicesPhysica B Condensed Matter2025Цитирований: 4

   ABIABI:AkademIndex/openalex/2025.article.000898

2. Influence of gamma doses on the optical and electrical properties of oxygen-impurity and chromium-doped GaAs

   M. Yu. Tashmetov, Abror Abdaminov

   СтатьяSemiconductor Quantum Structures and DevicesJournal of Physics Condensed Matter2025Цитирований: 1

   ABIABI:AkademIndex/openalex/2025.article.002520

3. The Study of Structure, Electrophysical, Physicomechanical and Optical Properties of Gaas with Oxygen Impurities and Doped Chromium

   M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2

   ПрепринтGaN-based semiconductor devices and materialsSSRN Electronic Journal2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.preprint.000087

4. Comprehensive study of GaAs(O):Cr after gamma irradiation: x-ray analysis, surface morphology, and microhardness properties

   M Yu Tashmetov, Abror Abdaminov

   СтатьяRadiation Effects in ElectronicsPhysica Scripta2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.017583