Dmytro B. But

Работ: 1

Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine, Center for Terahertz Research and Applications (CENTERA), Institute of High Pressure Physics of the PAS

1. Features of the Formation of Ohmic Contacts to n+-InN

   Pavlo Sai, N. V. Safryuk-Romanenko, Dmytro B. But +6

   СтатьяGaN-based semiconductor devices and materialsUkrainian Journal of Physics2019Цитирований: 0

   ABIABI:AkademIndex/openalex/2019.article.001077