L. G. Lavrent’eva

Работ: 4

V. D. Kuznetsov Siberian Physicotechnical Institute, State University, Tomsk

1. Kinetics and growth mechanism of gallium arsenide crystals in gas-phase epitaxy

   L. G. Lavrent’eva

   Статьяnanoparticles nucleation surface interactionsRussian Physics Journal1980Цитирований: 0

   ABIABI:AkademIndex/openalex/1980.article.000078

2. Influence of supersaturation on the growth of gallium arsenide films in chloride gas-transport systems

   L. G. Lavrent’eva, V. A. Moskovkin, И. В. Ивонин

   СтатьяOptical Coatings and GratingsRussian Physics Journal1981Цитирований: 0

   ABIABI:AkademIndex/openalex/1981.article.000119

3. Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B

   Г. А. Александрова, И. В. Ивонин, L. G. Lavrent’eva +2

   СтатьяGaN-based semiconductor devices and materialsRussian Physics Journal1988Цитирований: 0

   ABIABI:AkademIndex/openalex/1988.article.000113

4. Role of the substrate in the formation of structure defects representing step retardation sites during vapor phase epitaxy of gallium arsenide

   И. В. Ивонин, N. N. Krivolapov, L. G. Lavrent’eva +1

   СтатьяSemiconductor materials and interfacesRussian Physics Journal1992Цитирований: 0

   ABIABI:AkademIndex/openalex/1992.article.000151