Статья

Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B

Г. А. АлександроваV. D. Kuznetsov Siberian Physicotechnical Institute, State University, TomskИ. В. ИвонинV. D. Kuznetsov Siberian Physicotechnical Institute, State University, TomskL. G. Lavrent’evaV. D. Kuznetsov Siberian Physicotechnical Institute, State University, TomskP. B. PashchenkoV. D. Kuznetsov Siberian Physicotechnical Institute, State University, TomskM. V. ChekanovaV. D. Kuznetsov Siberian Physicotechnical Institute, State University, Tomsk

Russian Physics Journaljournal1988en

ABI

Аннотация

Аннотация отсутствует.

Темы

GaN-based semiconductor devices and materials nanoparticles nucleation surface interactions

Идентификаторы

DOI: 10.1007/bf00895989

Цитирования и источники

Цитирований: 0Использованных источников: 6

Показатели — AkademScholar · Скоро