M. V. Chekanova

Работ: 1

V. D. Kuznetsov Siberian Physicotechnical Institute, State University, Tomsk

1. Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B

   Г. А. Александрова, И. В. Ивонин, L. G. Lavrent’eva +2

   СтатьяGaN-based semiconductor devices and materialsRussian Physics Journal1988Цитирований: 0

   ABIABI:AkademIndex/openalex/1988.article.000113