G. F. Karavaev

Работ: 7

V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk

1. Nonlinear theory of recombination waves in semiconductors

   G. F. Karavaev, Konstantin Zolnikov

   СтатьяNonlinear Photonic SystemsRussian Physics Journal1980Цитирований: 0

   ABIABI:AkademIndex/openalex/1980.article.000126

2. Nonlinear theory of surface-helical instability of a semiconductor plasma. II. Calculation of linear parameters

   G. F. Karavaev, Борис Андреевич Успенский, N. L. Chuprikov

   СтатьяFluid Dynamics and Thin FilmsRussian Physics Journal1980Цитирований: 0

   ABIABI:AkademIndex/openalex/1980.article.000127

3. Experimental investigation of the nonlinear properties of the surface helical instability in germanium

   G. F. Karavaev, G. F. Karlova, V. I. Gaman

   СтатьяLaser-induced spectroscopy and plasmaRussian Physics Journal1981Цитирований: 0

   ABIABI:AkademIndex/openalex/1981.article.000092

4. UHF generation in sub-micron layers of GaAs

   G. F. Karavaev, Е. А. Ткаченко, E. V. Uimanov

   СтатьяSemiconductor Quantum Structures and DevicesRussian Physics Journal1989Цитирований: 0

   ABIABI:AkademIndex/openalex/1989.article.000130

5. Numerical analysis of the longitudinal electric current during resonance current flow in a n-GaAs/AlxGa1−xAs superlattice with doped quantum wells

   С. И. Борисенко, G. F. Karavaev

   СтатьяSemiconductor Quantum Structures and DevicesSemiconductors1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000228

6. Resonance tunneling of X-electrons in AlAs/GaAs(111) structures: Pseudopotential calculations and models

   G. F. Karavaev, В. Н. Чернышов

   СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2001Цитирований: 0

   ABIABI:AkademIndex/openalex/2001.article.000200

7. Scattering of holes by the GaAs/AlAs (111) and (110) interfaces

   G. F. Karavaev, В. Н. Чернышов

   СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000303