В. Н. Чернышов

Работ: 3

Siberian Physicotechnical Institute at Tomsk State University, Siberian Division, Russian Academy of Sciences, Novosobornaya pl. 1, Tomsk, 634050, Russia

1. Resonance tunneling of X-electrons in AlAs/GaAs(111) structures: Pseudopotential calculations and models

   G. F. Karavaev, В. Н. Чернышов

   СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2001Цитирований: 0

   ABIABI:AkademIndex/openalex/2001.article.000200

2. Scattering of holes by the GaAs/AlAs (111) and (110) interfaces

   G. F. Karavaev, В. Н. Чернышов

   СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000303

3. Noncontact Energy Efficient Microwave Method of Nondestructive Testing of Thermal Physical Characteristics of Building Materials and Products

   М. V. Zharikova, А. V. Chernyshov, В. Н. Чернышов

   СтатьяMicrowave-Assisted Synthesis and ApplicationsVestnik Tambovskogo gosudarstvennogo tehnicheskogo universiteta2015Цитирований: 0

   ABIABI:AkademIndex/openalex/2015.article.000452