A. А. Ситникова

Работ: 4

Russian Academy of Sciences

1. Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

   Evgenia V. Kalinina, G. Kholuyanov, A. А. Ситникова +6

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 1

   ABIABI:AkademIndex/openalex/2003.article.000128

2. Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

   W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000109

3. Modification of Silicon Oxide by High Energy Electron Beam

   E. Kolesnikova, A. А. Ситникова, В. И. Соколов +1

   СтатьяSilicon Nanostructures and PhotoluminescenceDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000103

4. Investigation of 4H-SiC Layers Implanted by Al Ions

   E. Kolesnikova, Evgenia V. Kalinina, A. А. Ситникова +2

   СтатьяSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena2007Цитирований: 0

   ABIABI:AkademIndex/openalex/2007.article.000171